Auger Electron Spectroscopy of Insulators Using Graphene as Conductive Layers

Auger Electron Spectroscopy of Free Argon Clusters

Auger electrm specm and Auger yields of free argon clusm in the I\I('Zp) excitation regime are reported. The Auger yield specua show chmcmistic changes as a function of cluster size. The results indicafe that the Auger yield signal originates primarily i%om the surface of the clusm. The results are compared to bulk-sensitive experimental techniques, such as tMal elecucm yields my), zero kinetic...

Surface Studied with Auger Electron Spectroscopy

We present an Auger electron spectroscopy (AES) study of the adsorption of nitric oxide (NO) on a dean Si(100)2 × 1 surface at 300 and 550 K. Accurate measurements reveal wall resolved fine structure at Auger Si L2.3 w transitions at 62 and 83 eV. These peaks can be attributed to Si-O and Si-N bonds. Furthermore, it is argued that the broadening in the SiLi2,~W Auger transition at 83 eV at 300 ...

Inelastic electron tunneling spectroscopy for topological insulators.

Inelastic electron tunneling spectroscopy is a powerful spectroscopy that allows one to investigate the nature of local excitations and energy transfer in the system of interest. We study inelastic electron tunneling spectroscopy for topological insulators and investigate the role of inelastic scattering on the Dirac node states on the surface of topological insulators. Local inelastic scatteri...

Electron-Hole Recombination Rates for Auger Scattering in Graphene

We calculate electron-hole recombination rates for Auger scattering in Graphene. The conduction and valence band dispersion relation in Graphene together with energy and momentum conservation requirements restrict the phase space for Auger processes so that electron-hole recombination times can be much longer than 1 ps for electron-hole densities smaller than 1012 cm−2.

Many-body effects in Auger electron emission from Graphene